By James C. Daly, Denis P. Galipeau
Built-in circuits (ICs) don't regularly paintings the 1st time. many stuff can and do get it wrong in analog circuit designs. there are many universal error that frequently require expensive chip redecorate and refabrication, all of that are kept away from while designers are conscious of the pitfalls. to achieve luck, IC designers want a entire toolbox-a toolbox stuffed not just with an effective heritage in electronics, layout thoughts and research abilities, but in addition with the main necessary instrument of all: event.
Analog BiCMOS layout bargains IC layout engineers the training comparable to a long time of functional event. Culled from the careers of practising engineers, it provides the best tools and the pitfalls most often encountered within the layout of biCMOS built-in circuits. available to an individual who has taken a path in electronics, this e-book covers the elemental layout of bandgap voltage references, present mirrors, amplifiers, and comparators. It studies universal layout error frequently missed and gives layout strategies used to therapy these problems.
With its entire insurance of simple circuit construction blocks, complete information of universal layout pitfalls, and a compendium of layout and structure difficulties and strategies, Analog BiCMOS layout is the precise reference for IC designers and engineers, fledgling and skilled alike. learn it to augment your historical past, browse it for concepts on heading off pitfalls, and if you happen to run right into a challenge, use it to discover a solution.
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Additional resources for Analog BiCMOS Design: Practices and Pitfalls
73) ox Since the gate capacitance per unit area is Cox = tox ox VGB = Φms + Vs + QB − Qox Cox At the onset of moderate inversion Vs = 2φf . 74, is the gate to bulk voltage at the threshold, when the transistor begins to turn on. 14 The gate to body voltage, VGB is the sum of the surface potential, Vs , the voltage across the oxide, V ox, and the body to gate contact potential Φms . where γ = √ 2qNA /Cox . γ (GAMMA) is the body eﬀect parameter. The contact potential between the gate and the bulk Φms contributes to the gate voltage.
This is described in terms of a decrease in the threshold voltage. The dependence of threshold voltage on body to source voltage is called the “body eﬀect”. Threshold voltage is covered more fully by Tsividis. 31) VT O is the zero bias threshold voltage. 32) If the bulk is held at a constant voltage with respect to the source, there is no change in drain current due to a change in bulk to source voltage and gmb can be considered zero. 5 Chapter Exercises 1. In an MOS transistor circuit having a 5 V power supply, estimate the channel length L that will give rise to velocity saturation.
Since the drain is at a higher voltage than the source, the depletion region is wider at the drain. 20 Measured epiFET characteristics are shown. The threshold voltage VTO is about -20 V. The constant current region is V ds > V gs − Vth . For V gs = −3, the constant current region starts at about V ds = 17 V .  the width of the depletion region. No buried layer is present because it would short out the epiFET. In a typical conﬁguration three regions, the gate, isolation well and the substrate are connected to the negative supply.