Advances in Electronics and Electron Physics, Vol. 72 by Peter W. Hawkes (Ed.)

February 23, 2017 | Electronics | By admin | 0 Comments

By Peter W. Hawkes (Ed.)

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In superlattices with thin enough barriers, the carrier motion along the growth axis exhibits significant dispersions (see Figs. 5, 7 for order of magnitude of superlattice bandwidths). Thus, by tilting the magnetic field around the growth axis one should not observe peak positions varying like Bcos6’ but rather probe the anisotropy of the superlattice subbands. Belle et al. (1985) have shown how interband magneto-optics with an in-plane magnetic field provides a decisive test of the existence of superlattice bands along the growth axis of GaAs-Gal _,Al,As superlattices.

2 meV. After Bastard et a[, (1987). d B d B d B d B C B C B C B C B I D 0 I FIG. 12. Schematic representation of an interface between two materials A (chemical formula BC) and B (chemical formula AB). Notice the existence of the hybrid bond A-B-C at the interface. should be sensitively dependent upon the growth conditions, host materials, .. . Empirically, one assumes that the band edge profile experienced by the envelope functions in an undoped heterostructure is piecewise constant except near the i I h interface, where the band discontinuities are taken up over a transition region of width bi.

1983; Chang 1987). e. that the carrier is forced by the quantum well to be the closer from the impurity site. As shown in Fig. , 1984b; Chang 1987). When the impurity is in the barrier it still creates a bound state below the ground quantum well subband. The binding energy of this state decreases relatively slowly with increasing separation between the impurity and the well. Moreover, a barrier impurity also gives rise to a resonant level roughly located at one effective Rydberg below the onset of the quantum well continuum.

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